x,ku-band internally matched fet features ? high output power: p1db=42.0dbm(typ.) ? high gain: g1db=6.0db(typ.) ? high pae: add=26%(typ.) ? broad band: 14.0 14.5ghz ? impedance matched zin/zout = 50 ? ? hermetically sealed package description the FLM1414-15F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ? system. absolute maximum ratings (case temperature tc=25 o c) electrical character istics (case temperature tc=25 o c) case style: ib g.c.p.:gain compression point , s.c.l.:single carrier level edition 1.4 may 2004 1 recommended operating condition(case temperature tc=25 o c) FLM1414-15F esd class iii 2000v ~ note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ? ) item symbol rating unit drain-source voltage gate-source voltage total power dissipation storage temperature v ds v gs p t t stg 15 -5 75 -65 to +175 v v w o c channel temperature t ch 175 o c power gain at 1db g.c.p. limit item symbol test conditions unit drain current output power at 1db g.c.p. gain flatness i dss p 1db ? g a v db dbm min. typ. max. drain current i dsr ms v ma - 6700 - -0.5 -1.5 -3.0 -5.0 - - 41.5 42.0 - 5.0 6.0 - - 4200 5000 v ds =10v f=14.0 - 14.5 ghz i ds =0.6i dss (typ) zs=z l =50 ? power-added efficiency add % - 26 - --1.2 - 7.2 10.0 v ds =5v , v gs =0v transconductance g m v ds =5v , i ds =3600ma pinch-off voltage v p v ds =5v , i ds =300ma gate-source breakdown voltage v gso i gs =-340 a g 1db db 3rd order intermodulation distortion im 3 f=14.5 ghz f=10mhz,2-tone test pout=30.0dbm(s.c.l.) thermal resistance -42.0 -45.0 - dbc r th channel to case - 1.8 2.0 o c/w channel temperature rise ? t ch 10v x idsr x rth --80 o c item symbol condition unit dc input voltage forward gate current v ds i gf Q 10 Q 48 v ma limit r g =50 ? reverse gate current i gr r g =50 ? R -6.6 ma
25 30 35 40 45 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 frequency [ghz] output power [dbm] pin=23dbm pin = 27dbm pin=31dbm pin=33dbm psat p1db -60 -58 -56 -54 -52 -50 -48 -46 -44 -42 -40 -38 -36 24 25 26 27 28 29 30 31 32 33 34 output power (s.c.l.) [dbm] intermodulation distortion [dbc] im 3 im 5 25 30 35 40 45 20 25 30 35 40 input power level [dbm] output power level [dbm] 0 10 20 30 40 50 60 70 80 90 100 efficiency [%] x,ku-band internally matched fet 2 output power , efficiency vs. input power imd vs output power output power vs. frequency FLM1414-15F 0 20 40 60 80 0 50 100 150 200 case temperature [ c] total power dissipation [w] power derating curve o vds=10v, ids=0.65idss f1=14.50ghz, f2=14.51ghz vds=10v, ids=0.65idss s.c.l :single carrier level
x,ku-band internally matched fet 3 s-parameter vds=10v, ids=4355ma s12 s21 0.6 0.4 3 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 14gh z 1 14.5 14.25 freq [ghz] mag ang mag a ng mag a ng mag ang 11.0 0.883 78.074 0.679 -162.875 0.023 158.196 0.757 36.902 11.5 0.842 6.384 0.812 115.730 0.029 77.861 0.708 -38.816 12.0 0.805 -68.624 1.046 32.823 0.040 -0.870 0.612 -118.143 12.5 0.729 -155.313 1.503 -65.968 0.064 -91.628 0.455 143.005 13.0 0.553 118.032 1.922 -168.885 0.092 170.080 0.308 23.310 13.5 0.301 14.254 2.153 84.943 0.108 68.684 0.285 -105.214 14.0 0.193 -169.602 2.182 -30.677 0.114 -35.708 0.308 146.159 14.5 0.330 57.246 1.987 -141.198 0.113 -134.062 0.243 62.332 15.0 0.373 -69.708 1.440 104.525 0.082 126.406 0.118 45.259 15.5 0.400 -173.403 0.733 2.596 0.045 48.953 0.247 10.815 16.0 0.529 119.056 0.486 -75.751 0.034 -13.903 0.293 -37.756 s11 s21 s12 s22 FLM1414-15F s11 s22 14g h z 14. 5 14g h z 25 14. 25 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10
x,ku-band internally matched fet 4 pin assigment 1 : gate 2 : source 3 : drain 4 : source unit : mm FLM1414-15F case style: ib
x,ku-band internally matched fet 5 FLM1414-15F for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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